SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J

RS庫存編號:: 915-8833
製造零件編號:: C2M1000170J
製造商:: Wolfspeed

SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J

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318 現貨庫存，可於3工作日發貨。

單價个（每托盘 2 ）

HK$83.97

單位	Per unit	Per Pack*
2 - 12	HK$83.97	HK$167.94
14 - 24	HK$81.875	HK$163.75
26 +	HK$80.605	HK$161.21
* 參考價格

RS庫存編號:: 915-8833
製造零件編號:: C2M1000170J
製造商:: Wolfspeed

產品概覽和技術數據資料表

法例與合規

COO (Country of Origin):: CN

產品詳細資訊

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

規格

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Voltage	1700 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	1.4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	78 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +25 V
Length	10.23mm
Typical Gate Charge @ Vgs	13 nC @ 20 V
Maximum Operating Temperature	+150 °C
Transistor Material	SiC
Number of Elements per Chip	1
Width	10.99mm
Forward Diode Voltage	3.8V
Height	4.57mm
Minimum Operating Temperature	-55 °C