C2M1000170J SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed

  • RS庫存編號 915-8833P
  • 製造零件編號 C2M1000170J
  • 製造商 Wolfspeed
COO (Country of Origin): CN

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

MOSFET Transistors, Wolfspeed

Attribute Value
Channel Type N
Maximum Continuous Drain Current 5.3 A
Maximum Drain Source Voltage 1700 V
Package Type D2PAK (TO-263)
Mounting Type Surface Mount
Pin Count 7
Maximum Drain Source Resistance 1.4 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 78 W
Transistor Configuration Single
Maximum Gate Source Voltage -10 V, +25 V
Number of Elements per Chip 1
Height 4.57mm
Length 10.23mm
Forward Diode Voltage 3.8V
Width 10.99mm
Transistor Material SiC
Typical Gate Charge @ Vgs 13 nC @ 20 V
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
342 現貨庫存,可於3工作日發貨。
單價 個 (以每管裝提供)
HK$ 46.875
Per unit
10 - 18
20 - 48
50 - 98
100 +