SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

RS庫存編號:: 915-8842
製造零件編號:: C3M0280090D
製造商:: Wolfspeed

SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

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38 現貨庫存，可於3工作日發貨。

單價个（每托盘 2 ）

HK$51.89

單位	Per unit	Per Pack*
2 - 6	HK$51.89	HK$103.78
8 - 14	HK$50.98	HK$101.96
16 +	HK$50.04	HK$100.08
* 參考價格

RS庫存編號:: 915-8842
製造零件編號:: C3M0280090D
製造商:: Wolfspeed

產品概覽和技術數據資料表

法例與合規

COO (Country of Origin):: CN

產品詳細資訊

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

規格

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	900 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	360 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	1.8V
Maximum Power Dissipation	54 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +18 V
Number of Elements per Chip	1
Transistor Material	SiC
Maximum Operating Temperature	+150 °C
Width	21.1mm
Length	16.13mm
Typical Gate Charge @ Vgs	9.5 nC @ 15 V
Forward Diode Voltage	4.8V
Height	5.21mm
Minimum Operating Temperature	-55 °C