- RS庫存編號:
- 916-3879
- 製造零件編號:
- CAS120M12BM2
- 製造商:
- Wolfspeed
- RS庫存編號:
- 916-3879
- 製造零件編號:
- CAS120M12BM2
- 製造商:
- Wolfspeed
法例與合規
產品詳細資訊
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
Ultra low loss high-frequency operation
Ease of paralleling due to SiC characteristics
Normally-off, fail-safe operation
Copper baseplate and aluminium nitride insulator reduce thermal requirements
Ultra low loss high-frequency operation
Ease of paralleling due to SiC characteristics
Normally-off, fail-safe operation
Copper baseplate and aluminium nitride insulator reduce thermal requirements
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Wolfspeed
規格
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 193 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | Half Bridge |
Mounting Type | Screw Mount |
Pin Count | 7 |
Maximum Drain Source Resistance | 30 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.6V |
Minimum Gate Threshold Voltage | 1.8V |
Maximum Power Dissipation | 925 W |
Transistor Configuration | Series |
Maximum Gate Source Voltage | -10 V, +25 V |
Number of Elements per Chip | 2 |
Width | 61.4mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | SiC |
Typical Gate Charge @ Vgs | 378 nC @ 20 V |
Length | 106.4mm |
Height | 30mm |
Forward Diode Voltage | 2.4V |
Minimum Operating Temperature | -40 °C |