IRLZ24NPBF N-Channel MOSFET, 18 A, 55 V HEXFET, 3-Pin TO-220AB Infineon

  • RS庫存編號 919-4895
  • 製造零件編號 IRLZ24NPBF
  • 製造商 Infineon
產品概覽和技術數據資料表
法例與合規
相容
COO (Country of Origin): MX
產品詳細資訊

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

規格
Attribute Value
Channel Type N
Maximum Continuous Drain Current 18 A
Maximum Drain Source Voltage 55 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 60 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 45 W
Transistor Configuration Single
Maximum Gate Source Voltage -16 V, +16 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 15 nC @ 5 V
Transistor Material Si
Height 8.77mm
Maximum Operating Temperature +175 °C
Series HEXFET
1050 現貨庫存,可於3工作日發貨。
單價 毎管:50 個
HK$ 6.912
(不含稅)
單位
Per unit
Per Tube*
50 - 50
HK$6.912
HK$345.60
100 - 150
HK$5.244
HK$262.20
200 - 450
HK$5.139
HK$256.95
500 - 950
HK$4.145
HK$207.25
1000 +
HK$3.317
HK$165.85
* 參考價格