- RS庫存編號:
- 194-9056
- 製造零件編號:
- CY14B101J2-SXI
- 製造商:
- Cypress Semiconductor
此產品已停售
- RS庫存編號:
- 194-9056
- 製造零件編號:
- CY14B101J2-SXI
- 製造商:
- Cypress Semiconductor
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The Cypress CY14C101J/CY14B101J/CY14E101J combines a 1-Mbit nvSRAM[2] with a nonvolatile element in each memory cell. The memory is organized as 128K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the QuantumTrap cells provide highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down (except for CY14X101J1). On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation). The STORE and RECALL operations can also be initiated by the user through I 2C commands.
規格
Attribute | Value |
---|---|
Memory Size | 1Mbit |
Organisation | 128K x 8 bit |
Data Bus Width | 8bit |
Maximum Random Access Time | 25ns |
Mounting Type | Surface Mount |
Package Type | SOIC |
Pin Count | 8 |
Dimensions | 4.97 x 3.98 x 1.47mm |
Length | 4.97mm |
Width | 3.98mm |
Height | 1.47mm |
Maximum Operating Supply Voltage | 3.6 V |
Maximum Operating Temperature | +85 °C |
Minimum Operating Temperature | -40 °C |
Minimum Operating Supply Voltage | 2.7 V |
Number of Bits per Word | 8bit |
Number of Words | 128K |