QRD1114 onsemi, IR Phototransistor, Through Hole 4-Pin Custom 4L package
- RS庫存編號:
- 184-1403
- 製造零件編號:
- QRD1114
- 製造商:
- onsemi
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已增加
單價 个（每托盘 10 ）
HK$9.681
| 單位 | Per unit | Per Pack* |
| 10 - 20 | HK$9.681 | HK$96.81 |
| 30 - 40 | HK$9.468 | HK$94.68 |
| 50 + | HK$9.265 | HK$92.65 |
| * 參考價格 | ||
- RS庫存編號:
- 184-1403
- 製造零件編號:
- QRD1114
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photo darlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photo darlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.
Phototransistor output
No contact surface sensing
Unfocused for sensing diffused surfaces
Compact package
Daylight filter on sensor
Applications:
Medical Electronics/Devices
Automation
Test and Measurement
Building & Home Control
No contact surface sensing
Unfocused for sensing diffused surfaces
Compact package
Daylight filter on sensor
Applications:
Medical Electronics/Devices
Automation
Test and Measurement
Building & Home Control
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Spectrums Detected | Infrared |
| Typical Fall Time | 50µs |
| Typical Rise Time | 10µs |
| Number of Channels | 1 |
| Maximum Dark Current | 100nA |
| Number of Pins | 4 |
| Mounting Type | Through Hole |
| Package Type | Custom 4L |
| Dimensions | 4.39 x 6.1 x 4.65mm |
| Collector Current | 1 (Minimum)mA |
| Maximum Wavelength Detected | 940nm |
| Spectral Range of Sensitivity | 940 nm |
| Width | 6.1mm |
| Saturation Voltage | 0.4V |
| Height | 4.65mm |
| Output Signal Type | Phototransistor |
| Collector Emitter Voltage | 30V |
| Length | 4.39mm |
| Emitter Collector Voltage | 5V |