- RS庫存編號:
- 195-2474
- 製造零件編號:
- NCP51820AMNTWG
- 製造商:
- onsemi
4000 現貨庫存,可於3工作日發貨。
已增加
單價 个(每带 4000 )
HK$9.11
單位 | Per unit | Per Reel* |
4000 - 4000 | HK$9.11 | HK$36,440.00 |
8000 - 12000 | HK$8.928 | HK$35,712.00 |
16000 + | HK$8.75 | HK$35,000.00 |
* 參考價格 |
- RS庫存編號:
- 195-2474
- 製造零件編號:
- NCP51820AMNTWG
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The NCP51820 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51820 offers short and matched propagation delays as well as −3.5 V to +650 V (typical) common mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51820 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
---|---|
Power Switch Type | High Side, Low Side |
Power Switch Topology | Low Side/High Side |
Number of Channels | 2 |
Maximum Operating Supply Voltage | 17 V |
Maximum Operating Current | 2.5mA |
Mounting Type | Surface Mount |
Package Type | QFN |
Pin Count | 15 |
Maximum Operating Temperature | +150 °C |
Dimensions | 4.05 x 4.05 x 0.85mm |