Infineon 600V 12A, Diode, 2-Pin TO-220 IDH12SG60CXKSA1

  • RS庫存編號 753-2973
  • 製造零件編號 IDH12SG60CXKSA1
  • 製造商 Infineon

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

Attribute Value
Mounting Type Through Hole
Package Type TO-220
Maximum Continuous Forward Current 12A
Peak Reverse Repetitive Voltage 600V
Diode Configuration Single
Diode Type Schottky
Pin Count 2
Maximum Forward Voltage Drop 2.2V
Number of Elements per Chip 1
Diode Technology Schottky
Peak Non-Repetitive Forward Surge Current 59A