Vishay 200V 30A, Dual Schottky Diode, 3-Pin D2PAK VB30200C-E3/4W
- RS庫存編號:
- 818-4383
- 製造零件編號:
- VB30200C-E3/4W
- 製造商:
- Vishay
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- RS庫存編號:
- 818-4383
- 製造零件編號:
- VB30200C-E3/4W
- 製造商:
- Vishay
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
TMBS - Trench MOS Barrier Schottky Rectifiers, 30A to 80A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Features
Schottky Rectifiers, Vishay Semiconductor
規格
Attribute | Value |
|---|---|
| Mounting Type | Surface Mount |
| Package Type | D2PAK (TO-263) |
| Maximum Continuous Forward Current | 30A |
| Peak Reverse Repetitive Voltage | 200V |
| Diode Configuration | Common Cathode |
| Diode Type | Schottky |
| Pin Count | 3 |
| Maximum Forward Voltage Drop | 1.1V |
| Number of Elements per Chip | 2 |
| Diode Technology | Schottky |
| Peak Non-Repetitive Forward Surge Current | 250A |