Infineon SRAM, CY62136EV30LL-45ZSXI- 2Mbit

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

Very high speed: 45 ns
Wide voltage range: 2.20 V to 3.60 V
Pin compatible with CY62136CV30
Ultra low standby power
Typical standby current: 1 μA
Maximum standby current: 7 μA
Ultra low active power
Typical active current: 2 mA at f = 1 MHz
Easy memory expansion with CE and OE features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for optimum speed/power
Offered in a Pb-free 48-ball very fine ball grid array (VFBGA) and 44-pin thin small outline package (TSOP II) packages

SRAM (Static Random Access Memory)