STMicroelectronics STGF3NC120HD IGBT, 6 A 1200 V, 3-Pin TO-220FP, Through Hole
- RS庫存編號:
- 795-9094
- 製造零件編號:
- STGF3NC120HD
- 製造商:
- STMicroelectronics
當前暫無庫存，可於2024/5/8發貨，3 工作日送達。
已增加
單價 个（每托盘 5 ）
HK$17.706
| 單位 | Per unit | Per Pack* |
| 5 - 10 | HK$17.706 | HK$88.53 |
| 15 - 20 | HK$17.262 | HK$86.31 |
| 25 + | HK$16.996 | HK$84.98 |
| * 參考價格 | ||
- RS庫存編號:
- 795-9094
- 製造零件編號:
- STGF3NC120HD
- 製造商:
- STMicroelectronics
法例與合規
產品詳細資訊
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 6 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 25 W |
| Package Type | TO-220FP |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 4.6 x 16.4mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |