MOSFETs

MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.


These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220.


What are depletion and enhancement modes?


MOSFET transistors have two modes; depletion and enhancement.
Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied.
Enhancement mode MOSFETs are similar to a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.


How do MOSFETs work?


The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease.
Power MOSFETs are similar to standard MOSFETs but they are designed to handle a higher level of power.


N-Channel vs. P-Channel MOSFETs


MOSFETs are made of p-type or n-type doped silicon.


  • N-Channel MOSFETS contain additional electrons which are free to move around. They are the more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.


  • P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

Where are MOSFETs used?


MOSFETs are found within many applications, such as microprocessors and other memory components. MOSFET transistors are most commonly used as a voltage-controlled switch within circuits.



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Description Price Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Maximum Power Dissipation Automotive Standard
RS庫存編號 891-2885
製造零件編號TK14A65W,S5X(M
BrandToshiba
HK$13.966
/個 (每包:5個)
單位
N 13.7 A 650 V 250 mΩ 3.5V - -30 V, +30 V TO-220SIS Through Hole 3 Single Enhancement 40 W -
RS庫存編號 168-7961
製造零件編號TK17A65W,S5X(M
BrandToshiba
HK$22.199
毎管:50 個
單位
N 17 A 650 V 200 mΩ 3.5V - -30 V, +30 V TO-220SIS Through Hole 3 Single Enhancement 45 W -
RS庫存編號 891-2914
製造零件編號TK17A65W,S5X(M
BrandToshiba
HK$11.612
/個 (每包:5個)
單位
N 17 A 650 V 200 mΩ 3.5V - -30 V, +30 V TO-220SIS Through Hole 3 Single Enhancement 45 W -
RS庫存編號 827-6154
製造零件編號TK17A65W,S5X(M
BrandToshiba
HK$18.055
/個 (每包:2個)
單位
N 17 A 650 V 200 mΩ 3.5V - -30 V, +30 V TO-220SIS Through Hole 3 Single Enhancement 45 W -
RS庫存編號 799-5056
製造零件編號TK17A65W,S5X(M
BrandToshiba
HK$9.75
/個 (每包:5個)
單位
N 17 A 650 V 200 mΩ 3.5V - -30 V, +30 V TO-220SIS Through Hole 3 Single Enhancement 45 W -
RS庫存編號 756-0382
製造零件編號3SK294(TE85L,F)
BrandToshiba
HK$1.845
/個 (每包:10個)
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N 30 mA 12.5 V - 1.5V - -8 V, +8 V USQ Surface Mount 4 Single Depletion 100 mW -
RS庫存編號 756-2782
製造零件編號SSM6N16FU(TE85L,F)
BrandToshiba
HK$1.845
/個 (每包:10個)
單位
N 100 mA 20 V 15 Ω 1.1V - -10 V, +10 V US Surface Mount 6 Isolated Enhancement 200 mW -
RS庫存編號 890-2695
製造零件編號2SK3565,S5Q(J
BrandToshiba
HK$33.886
/個 (每包:5個)
單位
N 5 A 900 V 2.5 Ω 4V - -30 V, +30 V SC-67 Through Hole 3 Single Enhancement 45 W -
RS庫存編號 601-5418
製造零件編號TPC8017-H(Q)
BrandToshiba
HK$10.60
/個 (每包:5個)
單位
N 15 A 30 V 7 mΩ - - -20 V, +20 V SOP Surface Mount 8 - Enhancement 1.9 W -
RS庫存編號 799-4814
製造零件編號2SK3565,S5Q(J
BrandToshiba
HK$14.222
/個 (每包:5個)
單位
N 5 A 900 V 2.5 Ω 4V - -30 V, +30 V SC-67 Through Hole 3 Single Enhancement 45 W -
RS庫存編號 639-5556
製造零件編號SSM3K16FS(TE85L,F)
BrandToshiba
HK$1.60
/個 (每包:10個)
單位
N 100 mA 20 V 3 Ω 1.1V - -10 V, +10 V SSM Surface Mount 3 Single Enhancement 100 mW -
RS庫存編號 891-2932
製造零件編號TK20E60W,S1VX(S
BrandToshiba
HK$13.066
/個 (每包:5個)
單位
N 20 A 600 V 155 mΩ 3.7V - -30 V, +30 V TO-220 Through Hole 3 Single Enhancement 165 W -
RS庫存編號 799-5040
製造零件編號TK16E60W,S1VX(S
BrandToshiba
HK$12.39
/個 (每包:5個)
單位
N 15.8 A 600 V 190 mΩ 3.7V - -30 V, +30 V TO-220 Through Hole 3 Single Enhancement 130 W -
RS庫存編號 827-6160
製造零件編號TK20E60W,S1VX(S
BrandToshiba
HK$16.856
/個 (每包:5個)
單位
N 20 A 600 V 155 mΩ 3.7V - -30 V, +30 V TO-220 Through Hole 3 Single Enhancement 165 W -
RS庫存編號 184-694
製造零件編號SSM3K17FU(F)
BrandToshiba
HK$1.315
/個 (每包:25個)
單位
N 100 mA 50 V 20 Ω 1.5V - -7 V, +7 V USM Surface Mount 3 Single Enhancement 150 mW -
RS庫存編號 891-2908
製造零件編號TK16E60W,S1VX(S
BrandToshiba
HK$9.87
/個 (每包:5個)
單位
N 15.8 A 600 V 190 mΩ 3.7V - -30 V, +30 V TO-220 Through Hole 3 Single Enhancement 130 W -
RS庫存編號 168-7963
製造零件編號TK20E60W,S1VX(S
BrandToshiba
HK$14.939
毎管:50 個
單位
N 20 A 600 V 155 mΩ 3.7V - -30 V, +30 V TO-220 Through Hole 3 Single Enhancement 165 W -
RS庫存編號 168-7959
製造零件編號TK16E60W,S1VX(S
BrandToshiba
HK$12.237
毎管:50 個
單位
N 15.8 A 600 V 190 mΩ 3.7V - -30 V, +30 V TO-220 Through Hole 3 Single Enhancement 130 W -
RS庫存編號 639-5562
製造零件編號SSM3K15FS(TE85L,F)
BrandToshiba
HK$1.70
/個 (每包:10個)
單位
N 100 mA 30 V 7 Ω 1.5V - -20 V, +20 V SSM Surface Mount 3 Single Enhancement 100 mW -
RS庫存編號 601-3355
製造零件編號SSM3K15F(F)
BrandToshiba
HK$0.779
/個 (每包:10個)
單位
N 100 mA 30 V 4 Ω 1.5V - -20 V, +20 V SOT-346 (SC-59) Surface Mount 3 Single Enhancement 200 mW -