Infineon BFP620FH7764XTSA1 NPN Transistor, 80 mA, 7.5 V, 4-Pin TSFP

  • RS庫存編號 110-7421
  • 製造零件編號 BFP620FH7764XTSA1
  • 製造商 Infineon

SiGe RF Bipolar Transistors, Infineon

A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.

Bipolar Transistors, Infineon

Attribute Value
Transistor Type NPN
Maximum DC Collector Current 80 mA
Maximum Collector Emitter Voltage 7.5 V
Package Type TSFP
Mounting Type Surface Mount
Maximum Power Dissipation 185 mW
Minimum DC Current Gain 110
Transistor Configuration Single
Maximum Collector Base Voltage 7.5 V
Maximum Emitter Base Voltage 1.2 V
Pin Count 4
Number of Elements per Chip 1
Width 0.8mm
Transistor Material SiGe
Dimensions 1.4 x 0.8 x 0.55mm
Length 1.4mm
Maximum Operating Temperature +150 °C
Height 0.55mm