- RS庫存編號:
- 170-2366
- 製造零件編號:
- BFP842ESDH6327XTSA1
- 製造商:
- Infineon
20 現貨庫存,可於3工作日發貨。
已增加
單價 个(每托盘 20 )
HK$3.496
單位 | Per unit | Per Pack* |
20 - 740 | HK$3.496 | HK$69.92 |
760 - 1480 | HK$3.409 | HK$68.18 |
1500 + | HK$3.357 | HK$67.14 |
* 參考價格 |
- RS庫存編號:
- 170-2366
- 製造零件編號:
- BFP842ESDH6327XTSA1
- 製造商:
- Infineon
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application.
Robust very low noise amplifier based on Infineon's reliable, high volume
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads
SiGe:C technology
Unique combination of high end RF performance and robustness
High linearity
High transition frequency
Transducer gain
Ideal for low voltage applications
Low power consumption, ideal for mobile applications
Easy to use Pb free and halogen free industry standard package with visible leads
規格
Attribute | Value |
---|---|
Transistor Type | NPN |
Maximum DC Collector Current | 40 mA |
Maximum Collector Emitter Voltage | 3.25 V |
Package Type | SOT-343 |
Mounting Type | Surface Mount |
Maximum Power Dissipation | 120 mW |
Transistor Configuration | Single |
Maximum Collector Base Voltage | 3.5 V, 4.1 V |
Maximum Operating Frequency | 60 GHz |
Pin Count | 4 |
Number of Elements per Chip | 1 |
Dimensions | 2 x 1.25 x 0.8mm |
Maximum Operating Temperature | +150 °C |