onsemi MJE200G NPN Transistor, 10 A, 40 V, 3-Pin TO-225
- RS庫存編號:
- 184-4314
- 製造零件編號:
- MJE200G
- 製造商:
- onsemi
500 現貨庫存，可於3工作日發貨。
已增加
單價 个 (以毎盒：500)
HK$3.221
| 單位 | Per unit | Per Box* |
| 500 - 500 | HK$3.221 | HK$1,610.50 |
| 1000 - 1500 | HK$3.124 | HK$1,562.00 |
| 2000 + | HK$3.03 | HK$1,515.00 |
| * 參考價格 | ||
- RS庫存編號:
- 184-4314
- 製造零件編號:
- MJE200G
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 10 A |
| Maximum Collector Emitter Voltage | 40 V |
| Package Type | TO-225 |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 15 W |
| Minimum DC Current Gain | 45 |
| Transistor Configuration | Single |
| Maximum Collector Base Voltage | 25 V dc |
| Maximum Emitter Base Voltage | 8 V dc |
| Maximum Operating Frequency | 10 MHz |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Dimensions | 7.8 x 3 x 11.1mm |
| Maximum Operating Temperature | +150 °C |