Infineon BFS483H6327XTSA1 NPN RF Bipolar Transistor, 65 mA, 12 V, 6-Pin SOT-363

RS庫存編號:: 826-9058
製造零件編號:: BFS483H6327XTSA1
製造商:: Infineon

Infineon BFS483H6327XTSA1 NPN RF Bipolar Transistor, 65 mA, 12 V, 6-Pin SOT-363

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RS庫存編號:: 826-9058
製造零件編號:: BFS483H6327XTSA1
製造商:: Infineon

BFS483, Low Noise Silicon Bipolar RF Transistor
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum DC Collector Current	65 mA
Maximum Collector Emitter Voltage	12 V
Package Type	SOT-363 (SC-88)
Mounting Type	Surface Mount
Maximum Power Dissipation	450 mW
Transistor Configuration	Single
Maximum Collector Base Voltage	20 V
Maximum Emitter Base Voltage	2 V
Maximum Operating Frequency	8 GHz
Pin Count	6
Number of Elements per Chip	1
Dimensions	2 x 1.25 x 0.8mm
Minimum Operating Temperature	-65 °C
Maximum Operating Temperature	+150 °C

Infineon BFS483H6327XTSA1 NPN RF Bipolar Transistor, 65 mA, 12 V, 6-Pin SOT-363

RF Bipolar Transistors, Infineon