Dual MOSFET, 6-Pin TSOT-23 onsemi FDC3601N
- RS庫存編號:
- 186-7147
- 製造零件編號:
- FDC3601N
- 製造商:
- onsemi
此產品暫時不接受預訂。
抱歉，此產品暫無現貨，目前也不接受預訂。
已增加
單價 个（每带 3000 ）
HK$1.749
| 單位 | Per unit | Per Reel* |
| 3000 - 12000 | HK$1.749 | HK$5,247.00 |
| 15000 + | HK$1.714 | HK$5,142.00 |
| * 參考價格 | ||
- RS庫存編號:
- 186-7147
- 製造零件編號:
- FDC3601N
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
1.0 A, 100 V
RDS(on) = 500 mΩ@ VGS = 10 V
RDS(on) = 550 mΩ @ VGS = 6 V
Low gate charge (3.7nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick)
Applications
This product is general usage and suitable for many different applications.
RDS(on) = 500 mΩ@ VGS = 10 V
RDS(on) = 550 mΩ @ VGS = 6 V
Low gate charge (3.7nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick)
Applications
This product is general usage and suitable for many different applications.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
|---|---|
| Package Type | TSOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Power Dissipation | 960 mW |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |