- RS庫存編號:
- 186-7406
- 製造零件編號:
- MJB45H11T4G
- 製造商:
- onsemi
可供預購。
已增加
單價 个(每带 800 )
HK$4.712
單位 | Per unit | Per Reel* |
800 - 800 | HK$4.712 | HK$3,769.60 |
1600 - 2400 | HK$4.617 | HK$3,693.60 |
3200 + | HK$4.525 | HK$3,620.00 |
* 參考價格 |
- RS庫存編號:
- 186-7406
- 製造零件編號:
- MJB45H11T4G
- 製造商:
- onsemi
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
規格
Attribute | Value |
---|---|
Transistor Type | PNP |
Maximum Collector Emitter Voltage | -80 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Maximum Power Dissipation | 50 W |
Minimum DC Current Gain | 60 |
Transistor Configuration | Single |
Maximum Emitter Base Voltage | 5 V dc |
Pin Count | 2 + Tab |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Dimensions | 10.29 x 9.65 x 4.83mm |