Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

RS庫存編號:: 188-2551
製造零件編號:: W29N01HVBINF
製造商:: Winbond

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

可享批量折扣

小計（1 托盤，共 210 件）*

HK$4,889.43

訂單超過 HK$250.00 免費送貨

暫時缺貨

從 2026年6月15日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每托盤*
210 - 210	HK$23.283	HK$4,889.43
420 - 630	HK$22.70	HK$4,767.00
840 +	HK$22.351	HK$4,693.71

* 參考價格

RS庫存編號:: 188-2551
製造零件編號:: W29N01HVBINF
製造商:: Winbond

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Winbond
	Memory Size	1Gbit
	Interface Type	Parallel
	Package Type	VFBGA
	Pin Count	63
	Organisation	128M x 8 bit
	Mounting Type	Surface Mount
	Cell Type	SLC NAND
	Minimum Operating Supply Voltage	2.7 V
	Maximum Operating Supply Voltage	3.6 V
	Block Organisation	Symmetrical
	Length	11.1mm
	Height	0.6mm
	Width	9.1mm
	Dimensions	11.1 x 9.1 x 0.6mm
	Number of Bits per Word	8bit
	Minimum Operating Temperature	-40 °C
	Series	W29N
	Number of Words	128M
	Maximum Random Access Time	25µs
	Maximum Operating Temperature	+85 °C

	選取全部
	品牌 Winbond
	Memory Size 1Gbit
	Interface Type Parallel
	Package Type VFBGA
	Pin Count 63
	Organisation 128M x 8 bit
	Mounting Type Surface Mount
	Cell Type SLC NAND
	Minimum Operating Supply Voltage 2.7 V
	Maximum Operating Supply Voltage 3.6 V
	Block Organisation Symmetrical
	Length 11.1mm
	Height 0.6mm
	Width 9.1mm
	Dimensions 11.1 x 9.1 x 0.6mm
	Number of Bits per Word 8bit
	Minimum Operating Temperature -40 °C
	Series W29N
	Number of Words 128M
	Maximum Random Access Time 25µs
	Maximum Operating Temperature +85 °C

Datasheet W29N01HVBINF

Density : 1Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 1G-bit/128M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Copy Back

Lowest power consumption

Read: 25mA(typ.3V),

Program/Erase: 25mA(typ.3V),

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

48-ball VFBGA

63-ball VFBGA

1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

訂單超過 HK$250.00 免費送貨

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