Infineon 4Mbit SPI FRAM Memory 8-Pin SOIC, CY15B104Q-SXI
- RS庫存編號:
- 124-2933P
- 製造零件編號:
- CY15B104Q-SXI
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計 24 件 (以管提供)*
HK$4,749.60
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 711 件從 2026年1月27日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 24 - 46 | HK$197.90 |
| 47 + | HK$193.90 |
* 參考價格
- RS庫存編號:
- 124-2933P
- 製造零件編號:
- CY15B104Q-SXI
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 4Mbit | |
| Organisation | 512K x 8 bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 5.33 x 5.33 x 1.78mm | |
| Length | 5.33mm | |
| Width | 5.33mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Height | 1.78mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 2 V | |
| Number of Words | 512K | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 4Mbit | ||
Organisation 512K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 5.33 x 5.33 x 1.78mm | ||
Length 5.33mm | ||
Width 5.33mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Height 1.78mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 2 V | ||
Number of Words 512K | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.