Infineon 256kbit Serial-I2C FRAM Memory 8-Pin SOIC, FM24V02A-G
- RS庫存編號:
- 124-2983P
- 製造零件編號:
- FM24V02A-G
- 製造商:
- Infineon
可享批量折扣
小計 24 件 (以管提供)*
HK$962.40
訂單超過 HK$250.00 免費送貨
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單位 | 每單位 |
|---|---|
| 24 - 46 | HK$40.10 |
| 48 + | HK$39.25 |
* 參考價格
- RS庫存編號:
- 124-2983P
- 製造零件編號:
- FM24V02A-G
- 製造商:
- Infineon
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 256kbit | |
| Organisation | 32K x 8 bit | |
| Interface Type | Serial-I2C | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 450ns | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Dimensions | 4.97 x 3.98 x 1.47mm | |
| Length | 4.97mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Width | 3.98mm | |
| Height | 1.47mm | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 32K | |
| Minimum Operating Supply Voltage | 2 V | |
| Minimum Operating Temperature | -40 °C | |
| Number of Bits per Word | 8bit | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 256kbit | ||
Organisation 32K x 8 bit | ||
Interface Type Serial-I2C | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 450ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 4.97 x 3.98 x 1.47mm | ||
Length 4.97mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Width 3.98mm | ||
Height 1.47mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 32K | ||
Minimum Operating Supply Voltage 2 V | ||
Minimum Operating Temperature -40 °C | ||
Number of Bits per Word 8bit | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
256-Kbit ferroelectric random access memory (F-RAM logically organized as 32K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention an Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire serial interface (I2C)
Up to 3.4-MHz frequency[1]
Direct hardware replacement for serial EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
175-μA active current at 100 kHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention an Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire serial interface (I2C)
Up to 3.4-MHz frequency[1]
Direct hardware replacement for serial EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
175-μA active current at 100 kHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.