Infineon 256 kB Parallel FRAM 28-Pin SOIC
- RS庫存編號:
- 125-4205P
- 製造零件編號:
- FM18W08-SG
- 製造商:
- Infineon
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小計 7 件 (以管提供)*
HK$683.90
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單位 | 每單位 |
|---|---|
| 7 - 13 | HK$97.70 |
| 14 + | HK$95.60 |
* 參考價格
- RS庫存編號:
- 125-4205P
- 製造零件編號:
- FM18W08-SG
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 256kB | |
| Product Type | FRAM | |
| Organisation | 32K x 8 Bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 1MHz | |
| Package Type | SOIC | |
| Pin Count | 28 | |
| Width | 7.62 mm | |
| Height | 2.37mm | |
| Length | 18.11mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Supply Voltage | 2.7V | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Number of Words | 32k | |
| Automotive Standard | AEC-Q100 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 256kB | ||
Product Type FRAM | ||
Organisation 32K x 8 Bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 1MHz | ||
Package Type SOIC | ||
Pin Count 28 | ||
Width 7.62 mm | ||
Height 2.37mm | ||
Length 18.11mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Maximum Supply Voltage 5.5V | ||
Minimum Supply Voltage 2.7V | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Number of Words 32k | ||
Automotive Standard AEC-Q100 | ||
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.