4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8 High-endurance 100 trillion (1014) read/writes 151-year data retention (See the Data Retention and Endurance table) NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Up to 20 MHz frequency Direct hardware replacement for serial flash and EEPROM Supports SPI mode 0 (0, 0) and mode 3 (1, 1) Sophisticated write protection scheme Hardware protection using the Write Protect (WP) pin Software protection using Write Disable instruction Software block protection for 1/4, 1/2, or entire array Low power consumption 200 A active current at 1 MHz 3 A (typ) standby current Low-voltage operation: VDD = 2.7 V to 3.6 V Industrial temperature: –40 C to +85 C Packages 8-pin small outline integrated circuit (SOIC) package 8-pin thin dual flat no leads (DFN) package