Infineon 4 MB SPI FRAM 8-Pin SOIC
- RS庫存編號:
- 188-5304
- 製造零件編號:
- CY15B104Q-SXI
- 製造商:
- Infineon
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小計（1 管，共 94 件）*
HK$20,895.918
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單位 | 每單位 | 每管* |
|---|---|---|
| 94 - 94 | HK$222.297 | HK$20,895.92 |
| 188 - 282 | HK$217.851 | HK$20,477.99 |
| 376 + | HK$213.495 | HK$20,068.53 |
* 參考價格
- RS庫存編號:
- 188-5304
- 製造零件編號:
- CY15B104Q-SXI
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Memory Size | 4MB | |
| Product Type | FRAM | |
| Organisation | 512 k x 8 Bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Maximum Clock Frequency | 40MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Width | 5.3 mm | |
| Height | 1.78mm | |
| Length | 5.3mm | |
| Standards/Approvals | No | |
| Maximum Operating Temperature | 85°C | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Number of Bits per Word | 8 | |
| Number of Words | 512K | |
| Automotive Standard | No | |
| Minimum Supply Voltage | 2V | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Memory Size 4MB | ||
Product Type FRAM | ||
Organisation 512 k x 8 Bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Maximum Clock Frequency 40MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Width 5.3 mm | ||
Height 1.78mm | ||
Length 5.3mm | ||
Standards/Approvals No | ||
Maximum Operating Temperature 85°C | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Number of Bits per Word 8 | ||
Number of Words 512K | ||
Automotive Standard No | ||
Minimum Supply Voltage 2V | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
相关链接
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