可享批量折扣
小計（1 管，共 97 件）*
HK$6,274.154
添加 97 件 件可免費送貨
有庫存
- 加上 388 件從 2026年2月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 97 - 97 | HK$64.682 | HK$6,274.15 |
| 194 - 291 | HK$63.389 | HK$6,148.73 |
| 388 + | HK$62.122 | HK$6,025.83 |
* 參考價格
- RS庫存編號:
- 188-5404
- 製造零件編號:
- FM24V05-G
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | FRAM | |
| Memory Size | 512kB | |
| Organisation | 64k x 8 Bit | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 450ns | |
| Maximum Clock Frequency | 3.4MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | No | |
| Length | 4.97mm | |
| Height | 1.38mm | |
| Width | 3.98 mm | |
| Maximum Operating Temperature | 85°C | |
| Automotive Standard | AEC-Q100 | |
| Number of Words | 64K | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2V | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type FRAM | ||
Memory Size 512kB | ||
Organisation 64k x 8 Bit | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 450ns | ||
Maximum Clock Frequency 3.4MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals No | ||
Length 4.97mm | ||
Height 1.38mm | ||
Width 3.98 mm | ||
Maximum Operating Temperature 85°C | ||
Automotive Standard AEC-Q100 | ||
Number of Words 64K | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2V | ||
- COO (Country of Origin):
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
相关链接
- Infineon 512 kB FRAM 8-Pin SOIC, FM24V05-G
- Infineon 512 kB Serial-I2C FRAM 8-Pin SOIC
- Infineon 512 kB Serial-I2C FRAM 8-Pin SOIC, FM24V05-GTR
- Infineon 512 kB SPI FRAM 8-Pin SOIC
- Infineon 512 kB SPI FRAM 8-Pin SOIC, FM25V05-G
- Infineon 512 kB Serial-SPI FRAM 8-Pin SOIC
- Infineon 512 kB Serial-SPI FRAM 8-Pin SOIC, FM25V05-GTR
- Infineon 128 kB FRAM 8-Pin SOIC