Infineon 64 kB Parallel FRAM 28-Pin SOIC-28, FM16W08-SG
- RS庫存編號:
- 273-7374
- 製造零件編號:
- FM16W08-SG
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 27 件)*
HK$1,236.708
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每管* |
|---|---|---|
| 27 - 81 | HK$45.804 | HK$1,236.71 |
| 108 + | HK$43.97 | HK$1,187.19 |
* 參考價格
- RS庫存編號:
- 273-7374
- 製造零件編號:
- FM16W08-SG
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | FRAM | |
| Memory Size | 64kB | |
| Organisation | 8k x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Package Type | SOIC-28 | |
| Pin Count | 28 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Number of Words | 8K | |
| Minimum Supply Voltage | 2.7V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Supply Voltage | 5.5V | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type FRAM | ||
Memory Size 64kB | ||
Organisation 8k x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Package Type SOIC-28 | ||
Pin Count 28 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Number of Words 8K | ||
Minimum Supply Voltage 2.7V | ||
Minimum Operating Temperature -40°C | ||
Maximum Supply Voltage 5.5V | ||
Automotive Standard No | ||
The Infineon FRAM is a 8 K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory. Its operation is similar to that of other RAM devices and therefore, it can be used as a drop in replacement for a standard SRAM in a system. Minimum read and write cycle times are equal. The FRAM memory is non volatile due to its unique ferroelectric memory process.
Low power consumption
SRAM and EEPROM compatible
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
Superior for moisture and shock with vibration
相关链接
- Infineon 64 kB Parallel FRAM 28-Pin SOIC-28
- Infineon 256 kB Parallel FRAM 28-Pin SOIC, FM28V020-SG
- Infineon 256 kB Parallel FRAM 28-Pin SOIC, FM18W08-SG
- Infineon 256 kB Parallel FRAM 28-Pin SOIC, FM1808B-SG
- Infineon 256 kB Parallel FRAM 28-Pin SOIC
- Infineon 256 kB FRAM 28-Pin SOIC-28
- Infineon 64 kB FRAM 8-Pin SOIC
- Infineon 64 kB FRAM 14-Pin SOIC
