ROHM BS2101F-E2 MOSFET Gate Driver 2, 18V 8-Pin, SOP

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RS庫存編號:
184-5238
製造零件編號:
BS2101F-E2
製造商:
ROHM
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品牌

ROHM

Supply Voltage

18V

Pin Count

8

Fall Time

170ns

Package Type

SOP

Driver Type

MOSFET

Number of Outputs

2

Rise Time

300ns

Topology

High and Low Side

Number of Drivers

2

Polarity

Non-Inverting

Mounting Type

Surface Mount

COO (Country of Origin):
JP
The BS2101F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.

Floating Channels for Bootstrap Operation to +600V
Gate drive supply range from 10V to 18V
Built-in Under Voltage Lockout for Both Channels
3.3V and 5.0V Input Logic Compatible
Matched Propagation Delay for Both Channels
Output in phase with input

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