Broadcom ATF-58143-BLKG HEMT 5 μA 5 V 4-Pin SOT-343

  • RS庫存編號 839-9951
  • 製造零件編號 ATF-58143-BLKG
  • 製造商 Broadcom
COO (Country of Origin): MY

N-channel HEMT, Avago Technologies

A High-electron-mobility transistor (HEMT, also known as a hetero-structure or hetero-junction FET) is a junction FET utilising two materials with different band gaps (i.e. a hetero-junction) as the channel instead of the doped region used in a MOSFET. HEMT transistors exhibit good high frequency characteristics and are generally used in small-signal low-noise RF applications.
HEMT, HFET, HJ-FET and MODFET are all terms used to describe transistors of this type.
The pHEMT or pseudomorphic-HEMT is variant of the basic HEMT transistor type, with E-pHEMT devices being Enhancement mode types.

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Attribute Value
Maximum Continuous Drain Current 5 μA
Maximum Drain Source Voltage 5 V
Maximum Gate Source Voltage -5 V, +1 V
Maximum Drain Gate Voltage -5 → 1V
Mounting Type Surface Mount
Package Type SOT-343
Pin Count 4
Configuration Dual Source
Maximum Power Dissipation 500 mW
Dimensions 2.25 x 1.35 x 1mm
Height 1mm
Length 2.25mm
Maximum Operating Temperature +150 °C
Width 1.35mm