IXYS MID75-12A3, Y4 M5 IGBT Module, 90 A max, 1200 V, Panel Mount

  • RS庫存編號 168-4471
  • 製造零件編號 MID75-12A3
  • 製造商 IXYS
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IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Transistor Configuration Single
Configuration Single
Maximum Continuous Collector Current 90 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type Y4 M5
Pin Count 7
Dimensions 94 x 34 x 30mm
Height 30mm
Length 94mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -40 °C
Width 34mm
72 現貨庫存,可於3工作日發貨。
單價 個 (以毎盒:6)
HK$ 350.868
(不含稅)
單位
Per unit
Per Box*
6 +
HK$350.868
HK$2,105.208
* 參考價格