onsemi NXH100B120H3Q0STGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

RS庫存編號:: 195-8770
製造零件編號:: NXH100B120H3Q0STG
製造商:: onsemi

onsemi NXH100B120H3Q0STGOS Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount

當前暫無庫存，可於2024/7/15發貨，3 工作日送達。

單價个（每套 24）

HK$659.035

單位	Per unit	Per Tray*
24 - 24	HK$659.035	HK$15,816.84
48 - 72	HK$645.855	HK$15,500.52
96 +	HK$632.938	HK$15,190.512
* 參考價格

RS庫存編號:: 195-8770
製造零件編號:: NXH100B120H3Q0STG
製造商:: onsemi

產品概覽和技術數據資料表

Datasheet NXH100B120H3Q0STG

法例與合規

產品詳細資訊

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

規格

Attribute	Value
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	186 W
Package Type	Q0BOOST
Configuration	Dual
Mounting Type	Surface Mount
Channel Type	N
Pin Count	22
Transistor Configuration	Dual
Dimensions	66.2 x 32.8 x 11.9mm
Minimum Operating Temperature	-40 °C
Maximum Operating Temperature	+150 °C