- RS庫存編號:
- 194-899
- 製造零件編號:
- IXGH32N170
- 製造商:
- IXYS
當前暫無庫存,可於2024/12/18發貨,3 工作日送達。
已增加
單價 个
HK$180.59
單位 | Per unit |
1 - 7 | HK$180.59 |
8 - 14 | HK$176.08 |
15 + | HK$173.38 |
- RS庫存編號:
- 194-899
- 製造零件編號:
- IXGH32N170
- 製造商:
- IXYS
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產品詳細資訊
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 1700 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | TO-247AD |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.26 x 5.3 x 21.46mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |