- RS庫存編號:
- 110-7153
- 製造零件編號:
- IGW15N120H3FKSA1
- 製造商:
- Infineon
本地庫存暫不足,貨期請向RS查詢
已增加
單價 个(每托盘 4 )
HK$32.328
單位 | Per unit | Per Pack* |
4 - 4 | HK$32.328 | HK$129.312 |
8 - 12 | HK$31.518 | HK$126.072 |
16 + | HK$31.035 | HK$124.14 |
* 參考價格 |
- RS庫存編號:
- 110-7153
- 製造零件編號:
- IGW15N120H3FKSA1
- 製造商:
- Infineon
法例與合規
產品詳細資訊
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 1100 to 1600V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 15 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 217 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.13 x 5.21 x 21.1mm |
Energy Rating | 2.5mJ |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 875pF |
Minimum Operating Temperature | -40 °C |