Infineon IGW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 110-7737
- 製造零件編號:
- IGW30N60H3FKSA1
- 製造商:
- Infineon
此產品已停售
- RS庫存編號:
- 110-7737
- 製造零件編號:
- IGW30N60H3FKSA1
- 製造商:
- Infineon
法例與合規
產品詳細資訊
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 187 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.13 x 5.21 x 21.1mm |
| Energy Rating | 1.72mJ |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +175 °C |
| Gate Capacitance | 1630pF |