Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247

  • RS庫存編號 110-7756
  • 製造零件編號 IKW30N60H3FKSA1
  • 製造商 Infineon
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Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 187 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 16.13mm
Width 5.21mm
Height 21.1mm
Dimensions 16.13 x 5.21 x 21.1mm
Maximum Operating Temperature +175 °C
Gate Capacitance 1630pF
Energy Rating 1.72mJ
Minimum Operating Temperature -40 °C
48 現貨庫存,可於3工作日發貨。
單價 /個 (每包:4個)
HK$ 30.41
(不含稅)
單位
Per unit
Per Pack*
4 - 16
HK$30.41
HK$121.64
20 - 96
HK$27.028
HK$108.112
100 - 196
HK$23.83
HK$95.32
200 - 496
HK$23.363
HK$93.452
500 +
HK$22.903
HK$91.612
* 參考價格
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