Infineon IKW40N65H5FKSA1, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

RS庫存編號:: 110-7779
製造零件編號:: IKW40N65H5FKSA1
製造商:: Infineon

Infineon IKW40N65H5FKSA1, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

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小計（1 包，共 4 件）*

HK$144.60

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單位	每單位	每包*
4 - 4	HK$36.15	HK$144.60
8 - 12	HK$35.25	HK$141.00
16 +	HK$34.70	HK$138.80

* 參考價格

RS庫存編號:: 110-7779
製造零件編號:: IKW40N65H5FKSA1
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	40A
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	250W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Series	High Speed Fifth Generation
	Standards/Approvals	JEDEC, RoHS
	Automotive Standard	No
	Energy Rating	0.51mJ

	選取全部
	品牌 Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 40A
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 250W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Series High Speed Fifth Generation
	Standards/Approvals JEDEC, RoHS
	Automotive Standard No
	Energy Rating 0.51mJ

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IKW40N65H5FKSA1, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

Infineon TrenchStop IGBT Transistors, 600 and 650V

IGBT Discretes & Modules, Infineon

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