IXYS IXXH80N65B4H1 IGBT, 430 A 650 V, 3-Pin TO-247AD, Through Hole
- RS庫存編號:
- 125-8049
- 製造零件編號:
- IXXH80N65B4H1
- 製造商:
- IXYS
當前暫無庫存，可於2025/4/25發貨，3 工作日送達。
已增加
單價 个
HK$112.47
| 單位 | Per unit |
| 1 - 7 | HK$112.47 |
| 8 - 14 | HK$109.65 |
| 15 + | HK$107.97 |
- RS庫存編號:
- 125-8049
- 製造零件編號:
- IXXH80N65B4H1
- 製造商:
- IXYS
法例與合規
- COO (Country of Origin):
- PH
產品詳細資訊
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 430 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 625 W |
| Number of Transistors | 1 |
| Package Type | TO-247AD |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 5 → 30kHz |
| Transistor Configuration | Single |
| Dimensions | 16.1 x 5.2 x 21.3mm |
| Minimum Operating Temperature | -55 °C |
| Energy Rating | 5.2mJ |
| Maximum Operating Temperature | +175 °C |