Infineon IKW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

RS庫存編號:: 165-5481
製造零件編號:: IKW20N60H3FKSA1
製造商:: Infineon

Infineon IKW20N60H3FKSA1 IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole

此圖片僅供參考，請參閲產品詳細資訊及規格

450 現貨庫存，可於3工作日發貨。

單價毎管：30 个

HK$18.506

單位	Per unit	Per Tube*
30 - 120	HK$18.506	HK$555.18
150 +	HK$16.655	HK$499.65
* 參考價格

RS庫存編號:: 165-5481
製造零件編號:: IKW20N60H3FKSA1
製造商:: Infineon

產品概覽和技術數據資料表

法例與合規

COO (Country of Origin):: CN

產品詳細資訊

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格

Attribute	Value
Maximum Continuous Collector Current	40 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	170 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	100kHz
Transistor Configuration	Single
Dimensions	16.13 x 5.21 x 21.1mm
Minimum Operating Temperature	-40 °C
Energy Rating	1.07mJ
Maximum Operating Temperature	+175 °C
Gate Capacitance	1100pF