STMicroelectronics STGB30M65DF2 IGBT, 60 A 650 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS庫存編號:
- 165-8044
- 製造零件編號:
- STGB30M65DF2
- 製造商:
- STMicroelectronics
此產品已停售
- RS庫存編號:
- 165-8044
- 製造零件編號:
- STGB30M65DF2
- 製造商:
- STMicroelectronics
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 258 W |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 9.35 x 4.6mm |
| Minimum Operating Temperature | -55 °C |
| Gate Capacitance | 2490pF |
| Maximum Operating Temperature | +175 °C |
| Energy Rating | 2.03mJ |