- RS庫存編號:
- 168-4474
- 製造零件編號:
- MII100-12A3
- 製造商:
- IXYS
當前暫無庫存,可於2024/10/29發貨,3 工作日送達。
已增加
單價 个 (以毎盒:6)
HK$1,134.955
單位 | Per unit | Per Box* |
6 - 24 | HK$1,134.955 | HK$6,809.73 |
30 + | HK$1,021.46 | HK$6,128.76 |
* 參考價格 |
- RS庫存編號:
- 168-4474
- 製造零件編號:
- MII100-12A3
- 製造商:
- IXYS
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
IGBT Modules, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 135 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | Y4 M5 |
Configuration | Series |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Transistor Configuration | Series |
Dimensions | 94 x 34 x 30mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |