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    Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole

    RS庫存編號:
    168-4561
    製造零件編號:
    7MBR50VB-120-50
    製造商:
    Fuji Electric
    Fuji Electric

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    單位

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    抱歉,此產品暫無現貨,目前也不接受預訂。

    已增加

    單價 個 (以毎盒:10)

    HK$1,102.986

    單位Per unitPer Box*
    10 - 40HK$1,102.986HK$11,029.86
    50 +HK$992.687HK$9,926.87
    * 參考價格
    RS庫存編號:
    168-4561
    製造零件編號:
    7MBR50VB-120-50
    製造商:
    Fuji Electric
    COO (Country of Origin):
    JP

    產品概覽和技術數據資料表


    法例與合規

    COO (Country of Origin):
    JP

    產品詳細資訊

    IGBT Modules 7-Pack, Fuji Electric


    V-Series


    IGBT Discretes & Modules, Fuji Electric


    The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

    規格

    AttributeValue
    Maximum Continuous Collector Current50 A
    Maximum Collector Emitter Voltage1200 V
    Maximum Gate Emitter Voltage±20V
    Maximum Power Dissipation280 W
    Configuration3 Phase Bridge
    Package TypeM712
    Mounting TypeThrough Hole
    Channel TypeN
    Pin Count24
    Transistor Configuration3 Phase
    Dimensions122 x 62 x 17mm
    Maximum Operating Temperature+150 °C
    可供預購。
    Add to Basket
    單位

    此產品暫時不接受預訂。

    抱歉,此產品暫無現貨,目前也不接受預訂。

    已增加

    單價 個 (以毎盒:10)

    HK$1,102.986

    單位Per unitPer Box*
    10 - 40HK$1,102.986HK$11,029.86
    50 +HK$992.687HK$9,926.87
    * 參考價格