Fuji Electric 7MBR50VB-120-50 3 Phase Bridge IGBT Module, 50 A 1200 V, 24-Pin M712, Through Hole
- RS庫存編號:
- 168-4561
- 製造零件編號:
- 7MBR50VB-120-50
- 製造商:
- Fuji Electric
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單價 個 (以毎盒：10)
HK$1,102.986
| 單位 | Per unit | Per Box* |
| 10 - 40 | HK$1,102.986 | HK$11,029.86 |
| 50 + | HK$992.687 | HK$9,926.87 |
| * 參考價格 | ||
- RS庫存編號:
- 168-4561
- 製造零件編號:
- 7MBR50VB-120-50
- 製造商:
- Fuji Electric
- COO (Country of Origin):
- JP
法例與合規
- COO (Country of Origin):
- JP
產品詳細資訊
IGBT Modules 7-Pack, Fuji Electric
V-Series
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
| Attribute | Value |
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 280 W |
| Configuration | 3 Phase Bridge |
| Package Type | M712 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 24 |
| Transistor Configuration | 3 Phase |
| Dimensions | 122 x 62 x 17mm |
| Maximum Operating Temperature | +150 °C |