IXYS IXYN100N120B3H1 IGBT, 165 A 1200 V, 4-Pin SOT-227B

  • RS庫存編號 168-4760
  • 製造零件編號 IXYN100N120B3H1
  • 製造商 IXYS
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COO (Country of Origin): US
產品詳細資訊

IGBT Discretes, IXYS XPT series

The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

規格
Attribute Value
Maximum Continuous Collector Current 165 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 690 W
Package Type SOT-227B
Mounting Type Surface Mount
Channel Type N
Pin Count 4
Switching Speed 5 → 30kHz
Transistor Configuration Single
Length 38.23mm
Width 25.07mm
Height 9.6mm
Dimensions 38.23 x 25.07 x 9.6mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
當前暫無庫存,可於2019/12/20發貨,3 工作日送達。
單價 毎管:10 個
HK$ 232.06
(不含稅)
單位
Per unit
Per Tube*
10 +
HK$232.06
HK$2,320.60
* 參考價格