IXYS IXDN55N120D1 IGBT, 100 A 1200 V, 4-Pin SOT-227B, Surface Mount
- RS庫存編號:
- 168-4761
- 製造零件編號:
- IXDN55N120D1
- 製造商:
- IXYS
當前暫無庫存，可於2025/1/13發貨，3 工作日送達。
已增加
單價 毎管：10 个
HK$270.503
| 單位 | Per unit | Per Tube* |
| 10 - 40 | HK$270.503 | HK$2,705.03 |
| 50 + | HK$243.454 | HK$2,434.54 |
| * 參考價格 | ||
- RS庫存編號:
- 168-4761
- 製造零件編號:
- IXDN55N120D1
- 製造商:
- IXYS
法例與合規
- COO (Country of Origin):
- US
產品詳細資訊
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 100 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 450 W |
| Package Type | SOT-227B |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 4 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 38.2 x 25.07 x 9.6mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -40 °C |