STMicroelectronics STGW39NC60VD IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS庫存編號:
- 168-7754
- 製造零件編號:
- STGW39NC60VD
- 製造商:
- STMicroelectronics
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單價 毎管：30 個
原價 HK$49.678
您付款
HK$39.995
| 單位 | Per unit | Per Tube* |
| 30 - 30 | HK$39.995 | HK$1,199.85 |
| 60 - 90 | HK$39.126 | HK$1,173.78 |
| 120 + | HK$38.256 | HK$1,147.68 |
| * 參考價格 | ||
- RS庫存編號:
- 168-7754
- 製造零件編號:
- STGW39NC60VD
- 製造商:
- STMicroelectronics
- COO (Country of Origin):
- CN
法例與合規
- COO (Country of Origin):
- CN
產品詳細資訊
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
規格
| Attribute | Value |
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 250 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |