Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole
- RS庫存編號:
- 170-2371
- 製造零件編號:
- IKP20N60TXKSA1
- 製造商:
- Infineon
可享批量折扣
小計(1 包,共 10 件)*
HK$104.60
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 2,460 件從 2026年3月04日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | HK$10.46 | HK$104.60 |
| 20 - 20 | HK$10.20 | HK$102.00 |
| 30 + | HK$10.04 | HK$100.40 |
* 參考價格
- RS庫存編號:
- 170-2371
- 製造零件編號:
- IKP20N60TXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 41 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 166 W | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.36 x 4.57 x 15.95mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 0.77mJ | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 41 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 166 W | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.36 x 4.57 x 15.95mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 0.77mJ | ||
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses
Lowest V ce(sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
Very soft, fast recovery anti-parallel Emitter Controlled Diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Benefits:
Highest efficiency – low conduction and switching losses
Comprehensive portfolio in 600V and 1200V for flexibility of design
High device reliability
Target Applications:
UPS
Solar Inverters
Major Home Appliances
Welding
Air conditioning
Industrial Drives
Other hard switching applications
相关链接
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