Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

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RS庫存編號:
170-2371
製造零件編號:
IKP20N60TXKSA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

41 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

166 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.36 x 4.57 x 15.95mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Energy Rating

0.77mJ

Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses

Lowest V ce(sat) drop for lower conduction losses

Low switching losses

Easy parallel switching capability due to positive temperature coefficient in V ce(sat)

Very soft, fast recovery anti-parallel Emitter Controlled Diode

High ruggedness, temperature stable behavior

Low EMI emissions

Low gate charge

Very tight parameter distribution

Benefits:

Highest efficiency – low conduction and switching losses

Comprehensive portfolio in 600V and 1200V for flexibility of design

High device reliability

Target Applications:

UPS

Solar Inverters

Major Home Appliances

Welding

Air conditioning

Industrial Drives

Other hard switching applications

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