onsemi NXH100B120H3Q0STG Dual IGBT Module 1200 V, 22-Pin Q0BOOST, Surface Mount
- RS庫存編號:
- 195-8770
- 製造零件編號:
- NXH100B120H3Q0STG
- 製造商:
- onsemi
可享批量折扣
Price 个(每套 24)**
原價 HK$653.696
您付款
HK$462.608
可供預購。*
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 HK$250.00 即可享受 免費 送貨服務
單位 | 每單位 | 每托盤** |
---|---|---|
24 - 24 | HK$462.608 | HK$11,102.592 |
48 - 72 | HK$453.354 | HK$10,880.496 |
96 + | HK$444.288 | HK$10,662.912 |
** 參考價格
- RS庫存編號:
- 195-8770
- 製造零件編號:
- NXH100B120H3Q0STG
- 製造商:
- onsemi
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
---|---|---|
品牌 | onsemi | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 186 W | |
Configuration | Dual | |
Package Type | Q0BOOST | |
Mounting Type | Surface Mount | |
Channel Type | N | |
Pin Count | 22 | |
Transistor Configuration | Dual | |
Dimensions | 66.2 x 32.8 x 11.9mm | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -40 °C | |
選取全部 | ||
---|---|---|
品牌 onsemi | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 186 W | ||
Configuration Dual | ||
Package Type Q0BOOST | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 22 | ||
Transistor Configuration Dual | ||
Dimensions 66.2 x 32.8 x 11.9mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
相关链接
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