Infineon IGU04N60TAKMA1 IGBT, 4 A 600 V TO-251

The Infineon IGBTs has combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Very low VCE(sat) 1.5 V (typ)
Maximum Junction Temperature 175°C
Short circuit withstand time 5 microsecond

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.