Infineon IGBT Module, 80 A 650 V, 3-Pin PG-TO-247
- RS庫存編號:
- 249-6943
- 製造零件編號:
- IKW50N65SS5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
HK$1,417.29
訂單超過 HK$250.00 免費送貨
有庫存
- 180 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | HK$47.243 | HK$1,417.29 |
| 60 - 60 | HK$42.517 | HK$1,275.51 |
| 90 + | HK$41.24 | HK$1,237.20 |
* 參考價格
- RS庫存編號:
- 249-6943
- 製造零件編號:
- IKW50N65SS5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 274W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Switching Speed | 20ns | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Length | 41.9mm | |
| Width | 16.3 mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 274W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Switching Speed 20ns | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Length 41.9mm | ||
Width 16.3 mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP 5S5 IGBT co-packed with full-rated 6th generation Cool SiCTMS schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C
Industrial Power Supplies-Industrial SMPS
Energy Generation
Solar String Inverter
Energy Distribution -Energy Storage
相关链接
- Infineon IKW50N65SS5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3
- Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKW50N65RH5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3
- Infineon IKW40N65RH5XKSA1 Single IGBT Transistor Module, 40 A 650 V PG-TO247-3
- Infineon IKW75N65SS5XKSA1 Single IGBT Transistor Module, 75 A 650 V PG-TO247-3
- Infineon IKW75N65RH5XKSA1 Single IGBT Transistor Module, 75 A 650 V PG-TO247-3