製造零件編號

Bourns BIDW20N60T IGBT, 40 A 600 V TO-247

RS庫存編號:: 253-3504
製造零件編號:: BIDW20N60T
製造商:: Bourns

Bourns BIDW20N60T IGBT, 40 A 600 V TO-247

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小計（1 管，共 600 件）*

HK$13,765.20

訂單超過 HK$250.00 免費送貨

有庫存

1,800 件準備從其他地點送貨

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單位	每單位	每管*
600 +	HK$22.942	HK$13,765.20

* 參考價格

RS庫存編號:: 253-3504
製造零件編號:: BIDW20N60T
製造商:: Bourns

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Bourns
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	40A
	Maximum Collector Emitter Voltage Vceo	600V
	Maximum Power Dissipation Pd	192W
	Package Type	TO-247
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.9V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Series	BIDW20N60T
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	選取全部
	品牌 Bourns
	Product Type IGBT
	Maximum Continuous Collector Current Ic 40A
	Maximum Collector Emitter Voltage Vceo 600V
	Maximum Power Dissipation Pd 192W
	Package Type TO-247
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.9V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Series BIDW20N60T
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - BIDW20N60T

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.

600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))

Trench-Gate Field-Stop technology

Optimized for conduction

Low switching loss

RoHS compliant

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Bourns BIDW20N60T IGBT, 40 A 600 V TO-247

訂單超過 HK$250.00 免費送貨

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