The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.
600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat)) Trench-Gate Field-Stop technology Optimized for conduction Low switching loss RoHS compliant
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