Bourns BIDW30N60T IGBT, 60 A 600 V, 3-Pin TO-247

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小計(1 管,共 600 件)*

HK$12,879.00

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600 +HK$21.465HK$12,879.00

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RS庫存編號:
253-3506
製造零件編號:
BIDW30N60T
製造商:
Bourns
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品牌

Bourns

Maximum Continuous Collector Current Ic

60A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

230W

Package Type

TO-247

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS 2015/863, 2015 and Annex, Mar 31

Series

BIDW30N60T

Automotive Standard

No

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure gives a lower thermal resistance R(th).

600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))

Trench-Gate Field-Stop technology

Optimized for conduction

RoHS compliant

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